AS4C4M4E1
®
Absolute maximum ratings
Parameter
Symbol
Vin
Min
-1.0
-1.0
-1.0
-55
–
Max
Unit
Input voltage
+7.0
VCC + 0.5
+7.0
+150
260 × 10
1
V
Input voltage (DQs)
VDQ
V
Power supply voltage
Storage temperature (plastic)
Soldering temperature × time
Power dissipation
VCC
V
TSTG
°C
oC × sec
TSOLDER
PD
–
W
Short circuit output current
Iout
–
50
mA
DC electrical characteristics
-50
-60
Parameter
Symbol Test conditions
Min Max Min Max Unit Notes
0V ≤ Vin ≤ +5.5V,
Input leakage current
IIL
-5
-5
–
+5
+5
-5
-5
–
+5
+5
µA
µA
Pins not under test = 0V
Output leakage current IOL
DOUT disabled, 0V ≤ Vout ≤ +5.5V
Operating power
ICC1
RAS, CAS Address cycling; tRC=min
RAS = CAS ≥ VIH
135
120
mA
1,2
supply current
TTL standby power
ICC2
–
–
2.0
–
–
2.0
mA
mA
supply current
Average power supply
current, RAS refresh
mode or CBR
RAS cycling, CAS ≥ VIH,
ICC3
120
110
1
t
RC = min of RAS low after CAS low.
EDO page mode average
power supply current
RAS = VIL, CAS
address cycling: tHPC = min
ICC4
ICC5
–
–
130
2.0
–
–
120
2.0
mA
mA
1, 2
CMOS standby power
supply current
RAS = CAS = VCC - 0.2V
VOH
VOL
IOUT = -5.0 mA
IOUT = 4.2 mA
2.4
–
–
2.4
–
–
V
V
Output voltage
0.4
0.4
CAS before RAS refresh
current
ICC6
RAS or CAS cycling, tRC = min
–
120
–
110
mA
5/22/01; v.1.29 point>
Alliance Semiconductor
P. 3 of 14
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
