AS4C4M4EOQ
AS4C4M4E1Q
®
Write cycle
-50
-60
Symbol Parameter
Min
0
Max
Min
0
Max
–
Unit
ns
Notes
11
tWCS
tWCH
tWP
Write command setup time
–
–
–
–
–
–
–
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
10
10
10
8
10
10
10
10
0
–
ns
11
–
ns
tRWL
tCWL
tDS
–
ns
–
ns
0
–
ns
12
12
tDH
Data-in hold time
8
10
–
ns
Read-modify-write cycle
-50
-60
Symbol Parameter
Min
113
67
Max
–
Min
135
77
Max
–
Unit
ns
Notes
tRWC
tRWD
tCWD
tAWD
Read-write cycle time
RAS to WE delay time
–
–
ns
11
11
11
CAS to WE delay time
32
–
35
–
ns
Column address to WE delay time
42
–
47
–
ns
Refresh cycle
-50
-60
Symbol Parameter
Min
5
Max
–
Min
5
Max
–
Unit
ns
Notes
tCSR
tCHR
tRPC
CAS setup time (CAS-before-RAS)
3
3
CAS hold time (CAS-before-RAS)
RAS precharge to CAS hold time
8
–
10
0
–
ns
0
–
–
ns
CAS precharge time
(CBR counter test)
tCPT
10
10
–
ns
3/22/01; v.1.0
Alliance Semiconductor
P. 7 of 16
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
