AS4C32M16D1A-C&I
Figure 21. Write to Read Max tDQSS Non Interrupting
T12
T8
T9
T10 T11
NOP
T4
T0
T1
T2
T3
T5
T6
T7
CK
CK
COMMAND
WRITE
READ
NOP
NOP
NOP
NOP
tWTR
Bank
Col o
Bank
Col n
ADDRESS
CL=3
tDQSS (max)
DQS
DQ
DI
n
DM
DI n, etc. = Data In for column n, etc.
1 subsequent elements of Data In are applied in the programmed order following DI n
A non-interrupted burst of 2 is shown
tWTR is referenced from the first positive CK edge after the last Data In Pair
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
The READ and WRITE commands are to the same devices but not necessarily to the same bank
DM= UDM & LDM
Don’t Care
38
Rev. 1.0
Mar. /2015
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
