AS4C256K16FO
®
Write cycle
Standard
Symbol
t
ASC
t
CAH
t
AWR
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
–25
Parameter
Column address setup time
Column address hold time
Column address hold time to RAS
Write command setup time
Write command hold time
Write command hold time to RAS
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
Data-in hold time to RAS
Min
0
5
19
0
5
19
5
7
5
0
5
19
Max
–
–
–
–
–
–
–
–
–
–
–
–
(V
CC
= 5V ± 10%, GND = 0V, T
a
= 0° C to +70° C)
–30
Min
0
5
26
0
5
26
5
10
10
0
5
26
Max
–
–
–
–
–
–
–
–
–
–
–
–
0
5
28
0
5
28
5
11
11
0
5
28
–35
Min
Max
–
–
–
–
–
–
–
–
–
–
–
–
0
9
30
0
9
30
9
12
12
0
9
30
–50
Min
Max
–
–
–
–
–
–
–
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
12
11
11
Notes
Read-modify-write cycle
Standard
Symbol
t
RWC
t
RWD
t
CWD
t
AWD
–25
Parameter
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
Min
100
34
17
21
7
15
Max
–
–
–
–
–
–
(V
CC
= 5V ± 10%, GND = 0V, T
a
= 0° C to +70° C)
–30
Min
100
50
26
32
10
15
Max
–
–
–
–
–
–
–35
Min
105
54
28
35
10
15
Max
–
–
–
–
–
–
–50
Min
120
60
30
40
12
15
Max
–
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
11
11
11
Notes
t
RSH(W)
CAS to RAS hold time (write)
t
CAS(W)
CAS pulse width (write)
Fast page mode cycle
Standard
Symbol
t
PC
t
CAP
t
CP
t
PCM
t
CRW
t
RASP
–25
Parameter
Read or write cycle time
Access time from CAS precharge
CAS precharge time
Fast page mode RMW cycle
Page mode CAS pulse width (RMW)
RAS pulse width
Min
8
–
3
56
44
25
(V
CC
= 5V ± 10%, GND = 0V, T
a
= 0° C to +70° C)
–30
Min
12
–
3
56
44
30
Max
–
19
–
–
–
75K
–
14
–
–
–
75K
14
–
4
58
46
35
–35
Min
Max
–
21
–
–
–
75K
25
–
5
60
50
50
–50
Min
Max
–
23
–
–
–
75K
Unit
ns
ns
ns
ns
ns
ns
Notes
14
13
Max
4/11/01; V.0.9.1
Alliance Semiconductor
P. 5 of 25
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
