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AS4C256M8D3-12BIN 参数 Datasheet PDF下载

AS4C256M8D3-12BIN图片预览
型号: AS4C256M8D3-12BIN
PDF下载: 下载PDF文件 查看货源
内容描述: [Fully synchronous operation]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 82 页 / 2107 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M8D3  
Functional Description  
The DDR3 SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM.  
The DDR3 SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n Prefetch architecture  
is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or  
write operation for the DDR3 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM  
core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins.  
Read and write operation to the DDR3 SDRAM are burst oriented, start at a selected location, and continue for a  
burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration  
of an Active command, which is then followed by a Read or Write command. The address bits registered coincident  
with the Active command are used to select the bank and row to be activated (BA0-BA2 select the bank; A0-A14  
select the row). The address bit registered coincident with the Read or Write command are used to select the  
starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10),  
and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register.  
Prior to normal operation, the DDR3 SDRAM must be powered up and initialized in a predefined manner. The  
following sections provide detailed information covering device reset and initialization, register definition, command  
descriptions and device operation.  
Figure 4. Reset and Initialization Sequence at Power-on Ramping  
Ta  
Tb  
Tc  
Td  
Te  
Tf  
Tg  
Th  
Ti  
Tj  
Tk  
CK#  
CK  
tCKSRX  
VDD  
VDDQ  
T=200μs  
T=500μs  
RESET#  
CKE  
tIS  
Tmin=10ns  
tDLLK  
tIS  
tXPR  
tMRD  
tMRD  
tMRD  
tMOD  
tZQinit  
Note 1  
MRS  
MR2  
MRS  
MR3  
MRS  
MR1  
MRS  
MR0  
ZQCL  
Note 1  
VALID  
VALID  
COMMAND  
BA  
tIS  
tIS  
VALID  
Static LOW in case RTT_Nom is enabled at time Tg, otherwise static HIGH or LOW  
ODT  
RTT  
NOTE 1. From time point Tduntil TkNOP or DES commands must be applied between MRS and ZQCL commands.  
TIME BREAK  
Don't Care  
Confidential  
9
Rev. 3.0  
Aug. /2014