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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
DQ0 - DQ15 Input /  
Output  
Data I/O: The DQ0-DQ15 input and output data are synchronized with positive and  
negative edges of DQS and DQS#. The I/Os are byte-maskable during Writes.  
ODT  
Input  
On Die Termination: ODT (registered HIGH) enables termination resistance internal to  
the DDR3 SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS#. The ODT  
pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT.  
RESET#  
Input  
Active Low Asynchronous Reset: Reset is active when RESET# is LOW, and inactive  
when RESET# is HIGH. RESET# must be HIGH during normal operation. RESET# is a  
CMOS rail to rail signal with DC high and low at 80% and 20% of VDD  
VDD  
VSS  
Supply  
Supply  
Supply  
Supply  
Power Supply: +1.5V 0.075V  
Ground  
VDDQ  
VSSQ  
VREFCA  
VREFDQ  
ZQ  
DQ Power: +1.5V 0.075V.  
DQ Ground  
Supply Reference voltage for CA  
Supply Reference voltage for DQ  
Supply Reference pin for ZQ calibration.  
NC  
-
No Connect: These pins should be left unconnected.  
Confidential  
7
Rev. 3.0  
Aug. /2014