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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256M16D3  
Mode Register MR0  
The mode-register MR0 stores data for controlling various operating modes of DDR3 SDRAM. It controls burst  
length, read burst type, CAS latency, test mode, DLL reset, WR, and DLL control for precharge Power-Down,  
which include various vendor specific options to make DDR3 DRAM useful for various applications. The mode  
register is written by asserting low on CS#, RAS#, CAS#, WE#, BA0, BA1, and BA2, while controlling the states of  
address pins according to the following figure.  
Table 4. Mode Register Bitmap  
BA2 BA1 BA0 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Field  
0*1  
0
0
0*1 0*1 PPD  
WR  
DLL TM  
CAS Latency RBT 0*1  
BL  
Mode Register (0)  
BA1 BA0 MRS mode  
A7 Mode  
A3 Read Burst Type  
0 Nibble Sequential  
A1 A0  
BL  
8 (Fixed)  
0
0
1
1
0
1
0
1
MR0  
MR1  
MR2  
MR3  
0
1
Normal  
Test  
0
0
1
1
0
1
0
1
BC4 or 8 (on the fly)  
BC4 (Fixed)  
Reserved  
1
Interleave  
A11 A10 A9  
WR (cycles)  
Reserved  
A6 A5 A4  
CAS Latency  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
5*2  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved  
6*2  
5
6
7*2  
8*2  
7
10*2  
12*2  
14*2  
8
9
10  
11  
A12 DLL Control for Precharge PD  
0
1
Slow exit (DLL off)  
Fast exit (DLL on)  
DLL Reset  
No  
A8  
0
1
Yes  
Note 1:  
Note 2:  
Reserved for future use and must be set to 0 when programming the MR.  
WR (write recovery for autoprecharge) min in clock cycles is calculated by dividing tWR (ns) by tCK (ns) and  
rounding up to the next integer WRmin [cycles] =Roundup (tWR / tCK). The value in the mode register must be  
programmed to be equal or larger than WRmin. The programmed WR value is used with tRP to determine  
tDAL.  
Confidential  
14  
Rev. 3.0  
Aug. /2014  
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