AS4C256K16E0
®
Write cycle
-30
-35
-50
Std
Symbol
Parameter
Min
0
Max
Min
0
Max
–
Min
0
Max Unit
Notes
tASC
Column address setup time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCAH
tAWR
tWCS
tWCH
tWCR
tWP
Column address hold time
Column address hold time to RAS
Write command setup time
Write command hold time
Write command hold time to RAS
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
5
5
–
9
26
0
28
0
–
30
0
–
11
11
5
5
–
9
26
5
28
5
–
30
9
–
tRWL
tCWL
tDS
10
10
0
11
11
0
–
12
12
0
–
–
12
12
tDH
Data-in hold time
5
5
–
9
tDHR
Data-in hold time to RAS
26
28
–
30
Shaded areas contain advance information.
Read-modify-write cycle
-30
-35
-50
Std
Symbol
Parameter
Min
100
50
Max
–
Min
105
54
Max
–
Min
120
60
Max Unit
Notes
tRWC
Read-write cycle time
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
tRWD
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
CAS to RAS hold time (write)
CAS pulse width (write)
–
–
11
11
11
tCWD
26
–
28
–
30
tAWD
32
–
35
–
40
tRSH(W)
tCAS(W)
10
–
10
–
12
15
–
15
–
15
Shaded areas contain advance information.
4/11/01; v.1.1
Alliance Semiconductor
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