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AS4C256K16E0-30 参数 Datasheet PDF下载

AS4C256K16E0-30图片预览
型号: AS4C256K16E0-30
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 256Kx16 CMOS DRAM ( EDO ) [5V 256Kx16 CMOS DRAM (EDO)]
分类和应用: 动态存储器
文件页数/大小: 24 页 / 632 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256K16E0
®
AC parameters common to all waveforms
Std
Symbol
t
RC
t
RP
t
RAS
t
CAS
t
RCD
t
RAD
t
RSH(R)
t
CSH
t
CRP
t
ASR
t
RAH
t
T
t
REF
t
CLZ
-30
Parameter
Random read or write cycle time
RAS
precharge time
RAS
pulse width
CAS
pulse width
RAS
to
CAS
delay time
RAS
to column address delay time
CAS
to
RAS
hold time (read cycle)
RAS
to
CAS
hold time
CAS
to
RAS
precharge time
-35
Max
75K
20
14
50
8
Min
70
25
35
6
16
11
10
35
5
0
6
1.5
0
Max
75K
24
17
50
8
Min
85
25
50
10
15
15
10
50
5
0
9
3
3
-50
Max
75K
35
25
50
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
4,5
3
8
6
7
Notes
Min
65
25
30
5
15
10
10
30
5
0
5
1.5
0
Row address setup time
Row address hold time
Transition time (rise and fall)
Refresh period
CAS
to output in low Z
Shaded areas contain advance information.
Read cycle
Std
Symbol
t
RAC
t
CAC
t
AA
t
AR(R)
t
RCS
t
RCH
tRRH
-30
Parameter
Access time from
RAS
Access time from
CAS
Access time from address
Column add hold from
RAS
Read command setup time
Read command hold time to
CAS
Read command hold time to
RAS
Column address to
RAS
Lead time
CAS
precharge time
-35
Max
30
10
16
8
Min
28
0
0
0
18
4
0
Max
35
10
18
8
Min
30
0
0
0
25
5
0
-50
Max
50
10
25
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8,10
9
9
Notes
6
6,13
7,13
Min
26
0
0
0
16
3
0
t
RAL
t
CPN
t
OFF
Output buffer turn-off time
Shaded areas contain advance information.
4/11/01; v.1.1
Alliance Semiconductor
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