AS4C1M16E5
®
Write cycle
-45
Symbol
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
Parameter
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
Min
0
10
10
10
8
0
8
Max
–
–
–
–
–
–
–
Min
0
10
10
10
8
0
8
-50
Max
–
–
–
–
–
–
–
Min
0
10
10
10
10
0
10
-60
Max
–
–
–
–
–
–
–
Unit
ns
ns
ns
ns
ns
ns
ns
15
15
Notes
14
14
Read-modify-write cycle
-45
Symbol
t
RWC
t
RWD
t
CWD
t
AWD
Parameter
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
Min
105
65
30
40
Max
–
–
–
–
Min
113
67
32
42
-50
Max
–
–
–
–
Min
135
77
35
47
-60
Max
–
–
–
–
Unit
ns
ns
ns
ns
14
14
14
Notes
Refresh cycle
-45
Symbol
t
CSR
t
CHR
t
RPC
t
CPT
Parameter
CAS setup time (CAS-before-RAS
)
CAS hold time (CAS-before-RAS)
RAS precharge to CAS hold time
CAS precharge time
(CBR counter test)
Min
5
8
0
10
Max
–
–
–
–
Min
5
8
0
10
-50
Max
–
–
–
–
Min
5
10
0
10
-60
Max
–
–
–
–
Unit
ns
ns
ns
ns
Notes
6
6
4/11/01; v.1.0
Alliance Semiconductor
P. 6 of 22