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AS4C14405-70TC 参数 Datasheet PDF下载

AS4C14405-70TC图片预览
型号: AS4C14405-70TC
PDF下载: 下载PDF文件 查看货源
内容描述: 1M位× 4 CMOS DRAM(快速页面模式或EDO ) [1M-bit × 4 CMOS DRAM (Fast page mode or EDO)]
分类和应用: 动态存储器
文件页数/大小: 16 页 / 395 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C14400
®
Fast page mode cycle
-40
Symbol
t
PC
t
CAP
t
CP
t
PCM
t
CRW
t
RASP
Parameter
Read-write cycle time
(fast page)
Access time from CAS precharge
CAS precharge time
(fast page)
Fast page mode RMW cycle
Page mode CAS pulse width
(RMW)
RAS pulse width
Min
30
5
65
45
40
Max
25
100K
Min
35
10
76
54
50
-50
Max
30
100K
Min
40
10
85
60
60
-60
Max
35
100K
Min
45
10
96
69
70
-70
Max
40
100K
Unit
ns
ns
ns
ns
ns
ns
Notes
14
13
Shaded areas contain advance information.
Refresh cycle
-40
Symbol
t
CSR
t
CHR
t
RPC
t
CPT
Parameter
CAS setup time (CAS-before-RAS)
CAS hold time (CAS-before-RAS)
RAS precharge to CAS hold time
CAS precharge time
(CAS-before-RAS counter test)
Min
10
10
0
5
Max
Min
10
10
0
10
-50
Max
Min
10
15
0
10
-60
Max
Min
10
15
0
10
-70
Max
Unit
ns
ns
ns
ns
Notes
3
3
Shaded areas contain advance information.
Output enable
Std
Symbol
t
ROH
t
OEA
t
OED
t
OEZ
t
OEH
-40
Parameter
RAS hold time referenced to OE
OE access time
OE to data delay
Output buffer turnoff delay
from OE
OE command hold time
Min
5
10
10
Max
10
10
Min
10
13
13
-50
Max
13
13
Min
10
15
15
-60
Max
15
15
Min
10
18
18
-70
Max
18
18
Unit
ns
ns
ns
ns
ns
8, 10
Notes
Shaded areas contain advance information.
6