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AS4C1M16E5-60JI 参数 Datasheet PDF下载

AS4C1M16E5-60JI图片预览
型号: AS4C1M16E5-60JI
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 1M × 16的CMOS DRAM( EDO ) [5V 1M×16 CMOS DRAM (EDO)]
分类和应用: 动态存储器
文件页数/大小: 22 页 / 601 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C1M16E5
®
DC electrical characteristics
-45
Parameter
Input leakag
e c
urrent
Output leakage
current
Operating power
supply current
TTL standby power
supply current
Average power supply
current, RAS refresh
mode or CBR
EDO page mode
average power supply
current
CMOS standby power
supply current
Output voltage
CAS before RAS
refresh current
Symbol Test conditions
I
IL
I
OL
I
CC1
I
CC2
I
CC3
0V
V
in
V
CC
(max)
Pins not under test = 0V
D
OUT
disabled, 0V
V
out
V
CC
(max)
RAS, UCAS, LCAS, Address cycling;
t
RC
=min
RAS = UCAS = LCAS
V
IH
,
all other inputs at V
IH
or V
IL
RAS cycling, UCAS = LCAS
V
IH
,
t
RC
= min of RAS low after XCAS
low.
RAS = V
IL
, UCAS or LCAS,
address cycling: t
HPC
= min
RAS = UCAS = LCAS = V
CC
- 0.2V,
F=0
I
OUT
= -5.0 mA
I
OUT
= 4.2 mA
RAS, UCAS or LCAS cycling, t
RC
=
min
Min
-5
-5
Max
+5
+5
155
2.0
-50
Min
-5
-5
Max
+5
+5
145
2.0
-60
Min
-5
-5
Max Unit Notes
+5
+5
135
2.0
µ
A
µ
A
mA
mA
4,5
145
135
125
mA
4
I
CC4
I
CC5
V
OH
V
OL
I
CC6
130
120
110
mA
4, 5
2.4
1.0
0.4
155
2.4
1.0
0.4
145
2.4
1.0
0.4
135
mA
V
V
mA
4/11/01; v.1.0
Alliance Semiconductor
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