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AS4C16M32MD1 参数 Datasheet PDF下载

AS4C16M32MD1图片预览
型号: AS4C16M32MD1
PDF下载: 下载PDF文件 查看货源
内容描述: [Four internal banks for concurrent operation]
分类和应用:
文件页数/大小: 58 页 / 2060 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C16M32MD1  
5.2 Register Definition  
5.2.1 Mode Register  
The Mode Register is used to define the specific mode of operation of the LPDDR SDRAM. This  
definition includes the definition of a burst length, a burst type, a CAS latency as shown below  
table.  
The Mode Register is programmed via the MODE REGISTER SET command (with BA0=0 and  
BA1=0) and will retain the stored information until it is reprogrammed, the device goes into Deep  
Power-Down mode, or the device loses power.  
Mode Register bits A0-A2 specify the burst length, A3 the type of burst (sequential or interleave),  
A4-A6 the CAS latency. A logic 0 should be programmed to all the undefined addresses bits to  
ensure future compatibility.  
The Mode Register must be loaded when all banks are idle and no bursts are in progress, and the  
controller must wait the specified time tMRD before initiating any subsequent operation. Violating  
either of these requirements will result in unspecified operation. Reserved states should not be  
used, as unknown operation or incompatibility with future versions may result.  
5.2.1.1 Burst Length  
Read and write accesses to the LPDDR SDRAM are burst oriented, with the burst length being set as  
in Table 3, and the burst order as in Table 4.  
The burst length determines the maximum number of column locations that can be accessed for a  
given READ or WRITE command. Burst lengths of 2, 4, or 8 locations are available for both the  
sequential and the interleaved burst types. A burst length of 16 is optional and some vendors may  
choose to implement it.  
Confidential  
13  
Rev. 1.0/July 2014