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AS4C16M16MD1-6BCN 参数 Datasheet PDF下载

AS4C16M16MD1-6BCN图片预览
型号: AS4C16M16MD1-6BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Programmable output buffer driver strength]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 55 页 / 6130 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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A
S4C16M16MD1  
256Mb MOBILE DDR SDRAM  
5.2 Register Definition  
5.2.1 Mode Register  
The Mode Register is used to define the specific mode of operation of the LPDDR SDRAM. This definition includes the definition  
of a burst length, a burst type, a CAS latency as shown below table.  
The Mode Register is programmed via the MODE REGISTER SET command (with BA0=0 and BA1=0) and will retain the stored  
information until it is reprogrammed, the device goes into Deep Power-Down mode, or the device loses power.  
Mode Register bits A0-A2 specify the burst length, A3 the type of burst (sequential or interleave), A4-A6 the CAS latency. A logic  
0 should be programmed to all the undefined addresses bits to ensure future compatibility.  
The Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the  
specified time tMRD before initiating any subsequent operation. Violating either of these requirements will result in unspecified  
operation.  
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.  
Mode  
BA1  
BA0  
A[n]~A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Burst Length  
CAS Latency  
010b: 2  
011b: 3  
001b  
010b  
011b  
:
2
4
8
Burst Type  
0:Sequential  
1:Interleave  
Standard  
MRS  
0
0
0
1
Reserved  
Reserved  
:
:
100b : 16  
Reserved  
Drive Strength  
000b: Full  
PASR  
Strength Driver  
001b: Half  
Strength Driver  
010b:Quarter  
Strength Driver  
011b:Octant  
Strength Driver  
000b : All banks  
001b : 1/2 array(BA1=0)  
010b : ¼ array(BA1=BA0=0)  
101b : 1/8 array  
(BA1 = BA0 = Row Addr MSB = 0)  
110b : 1/16 array  
Extended  
MRS  
1
0
Reserved  
Reserved  
(BA1=BA0 = Row Addr 2 MSB = 0)  
100b:ThreeQuarters  
Strength Driver  
Table 3 – Mode Register Table  
5.2.1.1 Burst Length  
Read and write accesses to the LPDDR SDRAM are burst oriented, with the burst length being set as in Table 6, and the burst  
order as in Table 4.  
The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE  
command. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst types. A burst  
length of 16 is optional and some vendors may choose to implement it.  
Mar, 28, 2013  
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