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AS4C128M8D3L 参数 Datasheet PDF下载

AS4C128M8D3L图片预览
型号: AS4C128M8D3L
PDF下载: 下载PDF文件 查看货源
内容描述: [AS4C128M8D3L - 78-ball FBGA PACKAGE]
分类和应用:
文件页数/大小: 88 页 / 3401 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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1Gb DDR3L AS4C128M8D3L  
DRAM setting for write leveling and DRAM termination unction in that mode  
DRAM enters into Write leveling mode if A7 in MR1 set “High” and after finishing leveling, DRAM exits from write  
leveling mode if A7 in MR1 set “Low”. Note that in write leveling mode, only DQS/DQS# terminations are activated  
and deactivated via ODT pin not like normal operation.  
Table 22. DRAM termination function in the leveling mode  
ODT pin at DRAM  
DQS, DQS# termination  
DQs termination  
De-asserted  
Asserted  
off  
on  
off  
off  
Note 1: In write leveling mode with its output buffer disabled (MR1[bit7]=1 with MR1[bit12]=1) all RTT_Nom settings are  
allowed; in Write Leveling Mode with its output buffer enabled (MR1[bit7]=1 with MR1[bit12]=0) only RTT_Nom  
settings of RZQ/2, RZQ/4, and RZQ/6 are allowed.  
Procedure Description  
Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. With entering write leveling  
mode, the DQ pins are in undefined driving mode. During write leveling mode, only NOP or Deselect commands are  
allowed. As well as an MRS command to exit write leveling mode. Since the controller levels one rank at a time, the  
output of other rank must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT after tMOD, time at  
which DRAM is ready to accept the ODT signal.  
Controller may drive DQS low and DQS# high after a delay of tWLDQSEN, at which time DRAM has applied on-die  
termination on these signals. After tDQSL and tWLMRD controller provides a single DQS, DQS# edge which is used  
by the DRAM to sample CK CK# driven from controller. tWLMRD(max) timing is controller dependent.  
DRAM samples CK CK# status with rising edge of DQS and provides feedback on all the DQ bits asynchronously  
after tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no  
read strobes (DQS/DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or  
decrement DQS DQS# delay setting and launches the next DQS/DQS# pulse after some time, which is controller  
dependent. Once a 0 to 1 transition is detected, the controller locks DQS DQS# delay setting and write leveling is  
achieved for the device.  
Confidential  
40  
Rev. 2.0  
Aug. /2014  
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