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AS4C128M8D3L 参数 Datasheet PDF下载

AS4C128M8D3L图片预览
型号: AS4C128M8D3L
PDF下载: 下载PDF文件 查看货源
内容描述: [AS4C128M8D3L - 78-ball FBGA PACKAGE]
分类和应用:
文件页数/大小: 88 页 / 3401 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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1Gb DDR3L AS4C128M8D3L  
Write Leveling  
For better signal integrity, DDR3L memory adopted fly by topology for the commands, addresses, control signals,  
and clocks. The fly by topology has benefits from reducing number of stubs and their length but in other aspect,  
causes flight time skew between clock and strobe at every DRAM on DIMM. It makes it difficult for the Controller to  
maintain tDQSS, tDSS, and tDSH specification. Therefore, the controller should support “write leveling” in DDR3L  
SDRAM to compensate the skew.  
The memory controller can use the “write leveling” feature and feedback from the DDR3L SDRAM to adjust the  
DQS DQS# to CK CK# relationship. The memory controller involved in the leveling must have adjustable delay  
setting on DQS DQS# to align the rising edge of DQS DQS# with that of the clock at the DRAM pin. DRAM  
asynchronously feeds back CK CK#, sampled with the rising edge of DQS DQS#, through the DQ bus. The  
controller repeatedly delays DQS DQS# until a transition from 0 to 1 is detected. The DQS DQS# delay  
established though this exercise would ensure tDQSS specification.  
Besides tDQSS, tDSS, and tDSH specification also needs to be fulfilled. One way to achieve this is to combine the  
actual tDQSS in the application with an appropriate duty cycle and jitter on the DQS- DQS# signals. Depending on  
the actual tDQSS in the application, the actual values for tDQSL and tDQSH may have to be better than the absolute  
limits provided in “AC Timing Parameters” section in order to satisfy tDSS and tDSH specification.  
DQS/DQS# driven by the controller during leveling mode must be determined by the DRAM based on ranks  
populated. Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.  
One or more data bits should carry the leveling feedback to the controller across the DRAM configurations x8.  
Therefore, a separate feedback mechanism should be available for each byte lane.  
Figure 13. Write Leveling Concept  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
CK#  
CK  
Source  
Diff_DQS  
Tn  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CK#  
CK  
Destination  
Diff_DQS  
DQ  
0 or 1  
0
0
0
Push DQS to capture  
0-1 transition  
Diff_DQS  
DQ  
0 or 1  
1
1
1
Confidential  
39  
Rev. 2.0  
Aug. /2014  
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