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AS4C128M16D2-25BCN 参数 Datasheet PDF下载

AS4C128M16D2-25BCN图片预览
型号: AS4C128M16D2-25BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Auto Refresh and Self Refresh]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 75 页 / 2533 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C128M16D2  
On-Die Termination (ODT)  
On Die Termination (ODT) is a feature that allows a DRAM to turn on/off termination resistance for each DQ,  
UDQS/UDQS, LDQS/LDQS, UDM and LDM via the ODT control pin. The ODT feature is designed to improve signal  
integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination  
resistance for any or all DRAM devices.  
The ODT function is supported for ACTIVE and STANDBY modes. ODT is turned off and not supported in SELF  
REFRESH mode.  
VDDQ  
sw1  
VDDQ  
VDDQ  
sw2  
sw3  
Rval3  
Rval2  
Rval1  
DRAM  
Input  
Buffer  
Input  
Pin  
Rval1  
sw1  
Rval2  
sw2  
Rval3  
sw3  
VSSQ  
VSSQ  
Switch (sw1, sw2, sw3) is enabled by ODT pin.  
Selection among sw1, sw2, and sw3 is determined by “Rtt (nominal)” in EMR.  
VSSQ  
Termination  
included on all  
DQs, UDQS/UDQS, LDQS/LDQS, UDM and LDM pins.  
Functional representation of ODT  
Confidential  
12  
Version 2.0 Oct/2014