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AS29LV800T-120TC 参数 Datasheet PDF下载

AS29LV800T-120TC图片预览
型号: AS29LV800T-120TC
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, TSOP1-48]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 25 页 / 231 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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Item  
Description  
Erase Suspend allows interruption of sector erase operations to read data from or program data to a  
sector not being erased. Erase suspend applies only during sector erase operations, including the  
time-out period. Writing an Erase Suspend command during sector erase time-out results in  
immediate termination of the time-out period and suspension of erase operation.  
AS29LV800 ignores any commands during erase suspend other than Read/ Reset, Program or Erase  
Resume commands. Writing the Erase Resume Command continues erase operations. Addresses are  
Dont Care when writing Erase Suspend or Erase Resume commands.  
AS29LV800 takes 0.2–15 µs to suspend erase operations after receiving Erase Suspend command.  
To determine completion of erase suspend, either check DQ6 after selecting an address of a sector  
not being erased, or poll RY/ BY. Check DQ2 in conjunction with DQ6 to determine if a sector is  
being erased. AS29LV800 ignores redundant writes of Erase Suspend.  
Erase Suspend  
While in erase-suspend mode, AS29LV800 allows reading data (erase-suspend-read mode) from or  
programming data (erase-suspend-program mode) to any sector not undergoing sector erase;  
these operations are treated as standard read or standard programming mode. AS29LV800 defaults  
to erase-suspend-read mode while an erase operation has been suspended.  
Write the Resume command 30h to continue operation of sector erase. AS29LV800 ignores  
redundant writes of the Resume command. AS29LV800 permits multiple suspend/ resume  
operations during sector erase.  
When attempting to write to a protected sector, DATA polling and Toggle Bit 1 (DQ6) are activated  
for about <1 µs. When attempting to erase a protected sector, DATA polling and  
Toggle Bit 1 (DQ6) are activated for about <5 µs. In both cases, the device returns to read mode  
without altering the specified sectors.  
Sector Protect  
Ready/ Busy  
RY/ BY indicates whether an automated on-chip algorithm is in progress (RY/ BY = low) or  
completed (RY/ BY = high). The device does not accept Program/ Erase commands when  
RY/ BY = low. RY/ BY= high when device is in erase suspend mode. RY/ BY = high when device  
exceeds time limit, indicating that a program or erase operation has failed. RY/ BY is an open drain  
output, enabling multiple RY/ BY pins to be tied in parallel with a pull up resistor to V .  
CC  
9/ 26/ 01; V.1.5  
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