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AS29LV400T-120BI 参数 Datasheet PDF下载

AS29LV400T-120BI图片预览
型号: AS29LV400T-120BI
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 256KX16, 120ns, PBGA48, 6 X 8 MM, 1.20 MM HEIGHT, BGA-48]
分类和应用: 内存集成电路
文件页数/大小: 27 页 / 282 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS29LV400T-120BI的Datasheet PDF文件第9页浏览型号AS29LV400T-120BI的Datasheet PDF文件第10页浏览型号AS29LV400T-120BI的Datasheet PDF文件第11页浏览型号AS29LV400T-120BI的Datasheet PDF文件第12页浏览型号AS29LV400T-120BI的Datasheet PDF文件第14页浏览型号AS29LV400T-120BI的Datasheet PDF文件第15页浏览型号AS29LV400T-120BI的Datasheet PDF文件第16页浏览型号AS29LV400T-120BI的Datasheet PDF文件第17页  
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START  
START  
Write erase command sequence  
(see below)  
Write program command sequence  
(see below)  
DATA polling or toggle bit  
successfully completed  
DATA polling or toggle bit  
successfully completed  
Erase complete  
Individual sector/ multiple sector  
Increment address  
erase command sequence  
Chip erase command sequence  
×16 mode (address/ data):  
×16 mode (address/ data):  
Last  
555h/ AAh  
2AAh/ 55h  
555h/ 80h  
555h/ AAh  
2AAh/ 55h  
555h/ 10h  
555h/ AAh  
2AAh/ 55h  
NO  
address?  
YES  
Programming completed  
555h/ 80h  
Program command sequence  
×16 mode (address/ data):  
555h/ AAh  
555h/ AAh  
2AAh/ 55h  
2AAh/ 55h  
Sector address/ 30h  
Sector address/ 30h  
Sector address/ 30h  
555h/ A0h  
Program address/ program data  
optional sector erase commands  
The system software should check the status of DQ3 prior to and following each  
subsequent sector erase command to ensure command completion. The device may  
not have accepted the command if DQ3 is high on second status check.  
8/ 9/ 01; V.0.9.9.1  
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