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&
ꢀ &ꢉꢒꢏꢕꢎꢄꢅꢂꢈꢅꢁꢍꢉꢌꢍꢒꢉꢈꢌ%ꢋꢏꢕ:
ꢀꢁꢑꢑꢁꢍꢉ ꢋꢌꢕꢇꢉ"ꢏꢑꢁꢄꢃꢉ&ꢍꢈꢏꢄ#ꢌꢎꢏꢉ;ꢓꢏꢄꢃꢉ&ꢒꢏꢍꢈꢅ#ꢅꢎꢌꢈꢅꢁꢍꢉꢐꢈꢄꢅꢍꢆ
Addresses (Word Mode)
Addresses (Byte Mode)
Data
Description
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Query unique ASCII string (QRY)
Primary OEM command set
Address for primary extended table
Alternate OEM command set (00h = does not exist)
Address for alternate OEM extended table (00h = does
not exist)
ꢐꢃꢕꢈꢏꢑꢉ&ꢍꢈꢏꢄ#ꢌꢎꢏꢉꢐꢈꢄꢅꢍꢆ
Addresses
Addresses
(Word Mode) (Byte Mode)
Data
Description
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0027h VccMin.(write/ erase), D7-D4:volt, D3-D0: 100 millivolt
0036h VccMax.(write/ erase), D7-D4: volt, D3-D0: 100 millivolt
0000h VppMin. Voltage (00h = no Vpp pin present)
0000h VppMax. Voltage (00h = no Vpp in present)
N
0004h Typical timeout per single byte/ word write 2 us
N
0000h Typical timeout for Min. size buffer write 2 us (00h = not supported)
N
000Ah Typical timeout per individual block erase 2 ms
N
0000h Typical timeout for full chip erase 2 ms (00h = not supported)
N
0005h Max. timeout for byte/ word write 2 times typical
N
0000h Max. timeout for buffer write 2 times typical
N
0004h Max. timeout per individual block erase 2 times typical
N
0000h Max. timeout for full chip erase 2 times typical (00h = not supported)
ꢞꢏꢖꢅꢎꢏꢉ<ꢏꢁꢑꢏꢈꢄꢃꢉꢞꢏ#ꢅꢍꢅꢈꢅꢁꢍ
Addresses
Addresses
(Word Mode) (Byte Mode)
Data
Description
N
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
0015h Device size = 2 byte
0002h
Flash device interface description
0000h
0000h
0000h
N
Max. number of byte in multi-byte write = 2 (00h = not supported)
0004h Number of erase block regions within device
0000h
0000h
Erase block region 1 information
0040h
0000h
8/ 30/ 01; V.0.9.5
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P. 12 of 29
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
