AS29F400
Preliminary information
®
DC electrical characteristics
Parameter
V
= 5.0±0.5V
CC
Symbol
Test conditions
Min
Max
±1
90
Unit
µA
Input load current
I
I
I
I
I
I
V
V
V
V
= V to V , V = V
CC MAX
-
LI
IN
SS
CC CC
A9 Input load current
Output leakage current
= V , A9 = 12.5V
CC MAX
µA
LIT
LO
OS
CC
CC2
CC
= V to V , V = V
-
-
-
-
±1
200
35
µA
OUT
OUT
SS
CC CC
CC MAX
1
Output short circuit current
= 0.5V
mA
mA
mA
2
Active current, read @ 6MHz
Active current, program/erase
CE = V , OE = V
IL
IH
3
CE = V , OE = V
60
IL
IH
CE = OE = V , V = V
,
CCMAX
IH CC
Standby current (TTL)
I
-
-
1.0
mA
µA
SB1
RESET = V
IH
CE = V + 0.5V, OE = V ,
CC
IH
Standby current (CMOS)
I
I
100
SB2
V
= V
, RESET = VCC ± 0.5V
CC
CC MAX
Deep power down current
Input low voltage
RESET = V ± 0.3V
-
5.0
0.8
µA
V
SB3
SS
V
V
V
V
V
V
V
-0.5
2.0
-
IL
Input high voltage
V
+ 0.5
CC
V
IH
Output low voltage
I
I
I
= 5.8mA, V = V
CC MIN
0.45
-
V
OL
OL
CC
= -2.5 mA, V = V
2.4
V
OH1
OH2
LKO
ID
OH
OH
CC
CC MIN
CC MIN
Output high voltage
= -100 µA, V = V
V
- 0.4
CC
-
V
CC
Low V lock out voltage
3.2
11.5
4.2
12.5
V
CC
Input HV select voltage
V
1
2
3
Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second. VOUT = 0.5V was selected to avoid test problems
caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)
The ICC current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency component typically
is less than 2 mA/MHz with OE at VIH
.
ICC active while program or erase operations are in progress.
Maximum negative overshoot waveform
20 ns 20 ns 20 ns
+0.8V
-0.5V
-2.0V
Maximum positive overshoot waveform
VCC+2.0V
VCC+0.5V
+2.0V
20 ns 20 ns 20 ns
11
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
