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AS29F200T-90TC 参数 Datasheet PDF下载

AS29F200T-90TC图片预览
型号: AS29F200T-90TC
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 256K ×8 / 128K ×8 CMOS FLASH EEPROM [5V 256K x 8/128K x 8 CMOS FLASH EEPROM]
分类和应用: 闪存存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 20 页 / 357 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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Write program command sequence
(see below)
$XWRPDWHG#RQ0FKLS#HUDVH#DOJRULWKP
Write erase command sequence
(see below)
DATA polling or toggle bit
successfully completed
DATA poll device
Erase complete
Chip erase command sequence
×16 mode (address/command):
5555h/AAh
YES
Programming completed
2AAAh/55h
2AAAh/55h
Sector erase command sequence
×16 mode (address/command):
5555h/AAh
Verify byte?
NO
Program command sequence
×16 mode (address/command):
5555h/AAh
5555h/80h
5555h/80h
5555h/AAh
5555h/AAh
2AAAh/55h
2AAAh/55h
2AAAh/55h
)/$6+
)/$6+
)/$6+
)/$6+
5555h/A0h
5555h/10h
Sector address/30h
Program address/program data
Optional multiple
sector erase commands
Sector address/30h
Sector address/30h
The system software should check the status of DQ3 prior to and
following each subsequent sector erase command to ensure command
completion. The device may not have accepted the command if DQ3 is
high on second status check.
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