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Parameter
Symbol
tVIDR
tRSP
All speeds
500 (min)
4 (min)
Unit
ns
VID rise and fall time
RESET# setup time for temporary sector unprotect
µs
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10V
0 or 1.8V
RESET
Program/ erase command sequence
tVIDR
tVIDR
CE
WE
tRSP
RY/ BY
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Parameter
9&&# #813±3189
Symbol Test conditions
Min
-
Max
Unit
µA
µA
µA
mA
mA
mA
µA
µA
V
Input load current
ILI
V
IN = VSS to VCC, VCC = VCCMAX
VCC = VCCMAX, A9 = 12.5V
OUT = V to VCC, VCC = VCCMAX
±1
A9 Input load current
Output leakage current
Output short circuit current1
Active current, read @ 6MHz2
Active current, program/ erase3
Standby current (TTL compatible)
Deep power down
ILIT
ILO
IOS
ICC
ICC2
ISB1
ISB2
90
V
-
±1
SS
VOUT = 0.5V
-
200
40
CE = V , OE = V
-
IL
IH
CE = V , OE = V
-
60
IL
IH
CE = OE = V , VCC = V
-
400
1
IH
CCMAX
RP = 0V
-
Input low voltage
V
-0.5
2.0
0.8
VCC + 0.3
0.45
-
IL
Input high voltage
V
V
IH
Output low voltage
V
IOL = 5.8mA, VCC = VCC MIN
IOH = -2.5 mA, VCC = VCC MIN
-
V
OL
V
2.4
V
OH1
Output high level
V
IOH = -100 µA, VCC = V
VCC - 0.4
2.8
-
V
OH2
CC MIN
Low VCC lock out voltage
Input HV select voltage
VLKO
4.2
12.5
V
V
11.5
V
h
1
2
3
Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second.
= 0.5V was selected to avoid test problems
OUT
caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)
The I current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency componenttypically
CC
is less than 2 mA/ MHz with OE at V .
IH
I
active while program or erase operations are in progress.
CC
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Rising input
Falling input
Undefined output/ don’t care
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ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
