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AS29F200B-120TI 参数 Datasheet PDF下载

AS29F200B-120TI图片预览
型号: AS29F200B-120TI
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 256K ×8 / 128K ×8 CMOS FLASH EEPROM [5V 256K x 8/128K x 8 CMOS FLASH EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 20 页 / 357 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS29F200B-120TI的Datasheet PDF文件第6页浏览型号AS29F200B-120TI的Datasheet PDF文件第7页浏览型号AS29F200B-120TI的Datasheet PDF文件第8页浏览型号AS29F200B-120TI的Datasheet PDF文件第9页浏览型号AS29F200B-120TI的Datasheet PDF文件第11页浏览型号AS29F200B-120TI的Datasheet PDF文件第12页浏览型号AS29F200B-120TI的Datasheet PDF文件第13页浏览型号AS29F200B-120TI的Datasheet PDF文件第14页  
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Read byte (DQ0DQ7)  
Read byte (DQ0DQ7)  
Address = don’t care  
Address = VA  
DQ7  
=
DQ6  
YES  
NO  
=
DONE  
DONE  
data  
toggle  
?
?
NO  
YES  
DQ5  
=
DQ5  
=
NO  
NO  
1
1
?
?
YES  
YES  
Read byte (DQ0DQ7)  
Address = VA  
Read byte (DQ0DQ7)  
Address = don’t care  
DQ7  
data‡  
?
DQ6  
YES  
NO  
=
=
DONE  
DONE  
toggle  
?
NO  
FAIL  
YES  
FAIL  
VA = Byte address for programming. VA = any of the sector  
addresses within the sector being erased during Sector Erase. VA  
= valid address equals any non-protected sector group address  
during Chip Erase.  
DQ6 rechecked even if DQ5 = 1 because DQ6 may stop toggling  
when DQ5 changes to 1.  
DQ7 rechecked even if DQ5 = 1 because DQ5 and DQ7 may not  
change simultaneously.  
43  
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