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AS29F040-90TI 参数 Datasheet PDF下载

AS29F040-90TI图片预览
型号: AS29F040-90TI
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 512K ×8 CMOS FLASH EEPROM [5V 512K x 8 CMOS FLASH EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 325 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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Write erase command sequence  
(see below)  
Write program command sequence  
DATA polling or toggle bit  
successfully completed  
(see below)  
DATA poll device-program  
Erase complete  
Programming completed  
Chip erase command sequence  
Sector erase command sequence  
5555h/ AAh  
5555h/ AAh  
2AAAh/ 55h  
5555h/ 80h  
5555h/ AAh  
2AAAh/ 55h  
5555h/ 10h  
Program command sequence  
5555h/ AAh  
2AAAh/ 55h  
5555h/ 80h  
2AAAh/ 55h  
5555h/ A0h  
5555h/ AAh  
2AAAh/ 55h  
Program address/ program data  
Sector address/ 30h  
Sector address/ 30h  
Sector address/ 30h  
Optional multiple  
sector erase commands  
*
*
The system software should check the status of DQ3 prior to and  
following each subsequent sector erase command to ensure command  
completion. The device may not have accepted the command if DQ3 is  
high on second status check.  
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