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AS29F040-90LI 参数 Datasheet PDF下载

AS29F040-90LI图片预览
型号: AS29F040-90LI
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 512K ×8 CMOS FLASH EEPROM [5V 512K x 8 CMOS FLASH EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 325 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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Item  
Description  
Initiate read or reset operations by writing the read/ reset command sequence into the command  
register. This allows the microprocessor to retrieve data from the memory. Device remains in read mode  
until command register contents are altered.  
Reset/ read  
Device automatically powers up in read/ reset state. This feature allows only reads, therefore ensuring no  
spurious memory content alterations during power up.  
AS29F040 provides manufacturer and device codes in two ways. External PROM programmers typically  
access the device codes by driving +12V on A9. AS29F040 also contains an ID read command to read  
the device code with only +5V, since multiplexing +12V on address lines is generally undesirable.  
Initiate device ID read by writing the ID read command sequence into the command register. Follow  
with a read sequence from address XXX00h to return MFG code. Follow ID read command sequence  
with a read sequence from address XXX01h to return device code.  
ID read  
To verify write protect status on sectors, read address XXX02h. Sector addresses A18–A16 produc e a1  
on DQ0 for protected sector and a 0 for unprotected sector.  
Exit from ID read mode with Read/ Reset command sequence.  
Programming the AS29F040 is a four bus cycle operation performed on a byte-by-byte basis. Two  
unlock write cycles precede the program setup command and program data write cycle. Upon  
execution of the program command, no additional CPU controls or timings are necessary. Addresses are  
latched on the falling edge of CE or WE, whichever is last; data is latched on the rising edge of CE or  
WE, whichever is first. The AS29F040s automated on-chip program algorithm provides adequate  
internally-generated programming pulses and verifies the programmed cell margin.  
Check programming status by sampling data on the DATA polling (DQ7), or toggle bit (DQ6). The  
AS29F040 returns the equivalent data that was written to it (as opposed to complemented data), to  
complete the programming operation.  
Byte/ word  
programming  
The AS29F040 ignores commands written during the programming operation.  
AS29F040 allows programming in any sequence, across any sector boundary. Changing data from 0 to 1  
requires an erase operation. Attempting to program data 0 to 1 results in DQ5 = 1 (exceeded  
programming time limits); reading this data after a read/ reset operation returns a 0. When  
programming time limit is exceeded, DQ5 reads high, and DQ6 continues to toggle. In this state , areset  
command returns the device to read mode.  
Chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional unlock  
write cycles; and finally the Chip erase command.  
Chip erase does not require logical 0s to be written prior to erasure. When the automated on-chip erase  
algorithm is invoked with the Chip erase command sequence, AS29F040 automatically programs and  
verifies the entire memory array for an all-zero pattern prior to erase. The AS29F040 returns to read  
mode upon completion of chip erase unless DQ5 is set high as a result of exceeding time limit.  
Chip erase  
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