0DUFK#5333
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Parameter
9&&# #813±3189
Symbol Test conditions
Min
-
Max
±1
90
Unit
Input load current
ILI
V
IN = VSS to VCC, VCC = VCC MAX
VCC = VCC MAX, A9 = 12.5V
OUT = V to VCC, VCC = VCC MAX
µA
A9 Input load current
ILIT
ILO
IOS
ICC
ICC2
ISB1
µA
Output leakage current
Output short circuit current*
Active current, read @ 6MHz†
Active current, program/ erase**
Standby current (TTL)
V
-
-
-
-
-
±1
200
30
µA
SS
VOUT = 0.5V
mA
mA
mA
mA
CE = V , OE = V
IL
IH
CE = V , OE = V
60
IL
IH
CE = OE = V , VCC = VCC MAX
1.0
IH
CE = VCC + 0.5V, OE = V ,
IH
Standby current (CMOS)
ISB2
-
400
µA
VCC = VCC MAX
Input low voltage
Input high voltage
Output low voltage
V
-0.5
2.0
0.8
V
IL
V
VCC + 0.5
V
V
V
V
V
V
IH
V
IOL = 12mA, VCC = V
-
0.45
-
OL
CC MIN
V
IOH = -2.5 mA, VCC = V
2.4
OH1
CC MIN
Output high voltage
V
IOH = -100 µA, VCC = VCC MIN
VCC - 0.4
2.8
-
OH2
Low VCC lock out voltage
VLKO
4.2
12.5
Input HV select voltage
V
11.5
ID
*
Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second.
= 0.5V was selected to avoid test problems
OUT
caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)
†
The I current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency component typically is
CC
less than 2 mA/ MHz with OE at V .
IH
**
I
active while program or erase operations are in progress.
CC
0D[LPXP#QHJDWLYH#RYHUVKRRW#ZDYHIRUP
20 ns 20 ns 20 ns
+0.8V
-0.5V
-2.0V
0D[LPXP#SRVLWLYH#RYHUVKRRW#ZDYHIRUP
VCC + 2.0V
VCC + 0.5V
+ 2.0V
20 ns 20 ns 20 ns
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44
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
