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AS29F040-55TI 参数 Datasheet PDF下载

AS29F040-55TI图片预览
型号: AS29F040-55TI
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 512K ×8 CMOS FLASH EEPROM [5V 512K x 8 CMOS FLASH EEPROM]
分类和应用: 闪存存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 325 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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Description
Initiate read or reset operations by writing the read/reset command sequence into the command
register. This allows the microprocessor to retrieve data from the memory. Device remains in read mode
until command register contents are altered.
Device automatically powers up in read/reset state. This feature allows only reads, therefore ensuring no
spurious memory content alterations during power up.
AS29F040 provides manufacturer and device codes in two ways. External PROM programmers typically
access the device codes by driving +12V on A9. AS29F040 also contains an ID read command to read
the device code with only +5V, since multiplexing +12V on address lines is generally undesirable.
ID read
Initiate device ID read by writing the ID read command sequence into the command register. Follow
with a read sequence from address XXX00h to return MFG code. Follow ID read command sequence
with a read sequence from address XXX01h to return device code.
To verify write protect status on sectors, read address XXX02h. Sector addresses A18–A16 produc e a1
on DQ0 for protected sector and a 0 for unprotected sector.
Exit from ID read mode with Read/Reset command sequence.
Programming the AS29F040 is a four bus cycle operation performed on a byte-by-byte basis. Two
unlock write cycles precede the program setup command and program data write cycle. Upon
execution of the program command, no additional CPU controls or timings are necessary. Addresses are
latched on the falling edge of CE or WE, whichever is last; data is latched on the rising edge of CE or
WE, whichever is first. The AS29F040’s automated on-chip program algorithm provides adequate
internally-generated programming pulses and verifies the programmed cell margin.
Byte/word
programming
Check programming status by sampling data on the DATA polling (DQ7), or toggle bit (DQ6). The
AS29F040 returns the equivalent data that was written to it (as opposed to complemented data), to
complete the programming operation.
The AS29F040 ignores commands written during the programming operation.
AS29F040 allows programming in any sequence, across any sector boundary. Changing data from 0 to 1
requires an erase operation. Attempting to program data 0 to 1 results in DQ5 = 1 (exceeded
programming time limits); reading this data after a read/reset operation returns a 0. When
programming time limit is exceeded, DQ5 reads high, and DQ6 continues to toggle. In this state , areset
command returns the device to read mode.
Chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional unlock
write cycles; and finally the Chip erase command.
Chip erase
Chip erase does not require logical 0s to be written prior to erasure. When the automated on-chip erase
algorithm is invoked with the Chip erase command sequence, AS29F040 automatically programs and
verifies the entire memory array for an all-zero pattern prior to erase. The AS29F040 returns to read
mode upon completion of chip erase unless DQ5 is set high as a result of exceeding time limit.
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