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AS29F040-55TI 参数 Datasheet PDF下载

AS29F040-55TI图片预览
型号: AS29F040-55TI
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 512K ×8 CMOS FLASH EEPROM [5V 512K x 8 CMOS FLASH EEPROM]
分类和应用: 闪存存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 18 页 / 325 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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Limits  
Parameter  
Min  
Typical  
1.0  
45  
Max  
Unit  
sec  
Sector erase and verify-1 time (excludes 00h programming prior to erase)  
-
-
Byte program time  
-
-
-
µs  
23  
Chip programming time  
Erase/ program cycles  
-
-
sec  
-
10,000  
cycles  
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Parameter  
Min  
Max  
Unit  
Input voltage with respect to V on A9 and OE  
-1.0  
-1.0  
-100  
+13.0  
VCC+1.0  
+100  
V
SS  
Input voltage with respect to VSS on all DQ, address and control pins  
Current  
V
mA  
Includes all pins except V . Test conditions: V = 5.0V, one pin at a time.  
CC  
CC  
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Device underTest  
Test condition  
Unit  
100 pF*  
Output load  
1 TTL gate  
5
Input rise and fall times  
Input pulse levels  
ns  
V
V
VSS  
0.0-3.0  
*including scope  
and jig capacitance  
Input timing measurement reference levels  
Output timing measurement reference levels  
1.5  
1.5  
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Parameter  
Symbol  
Min  
–2.0  
–2.0  
-0.5  
–55  
–65  
-
Max  
Unit  
V
Input voltage (Input or DQ pin)  
Input voltage (A9 pin, OE)  
Power supply voltage  
V
+7.0  
+13.0  
+5.5  
+125  
+125  
200  
IN  
V
V
IN  
VCC  
V
Operating temperature  
TOPR  
TSTG  
IOUT  
°C  
°C  
mA  
Storage temperature (plastic)  
Short circuit output current  
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect reliability.  
Includes all pins except V . Test conditions: V = 5.0V, one pin at a time.  
CC  
CC  
49  
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