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A
IN[4]
D
Write[4]
D
IN[4]
IN[3]
Mode
Reset
Status
Write[3] data address
data
Read address Read data
Read delay Maximum time out
00h
01h
x
x
x
0000h
0000h
Status
100 ns
100 ns
250 µs
250 µs
x
Status
ID Read
code
0000h
0001h
x
x
0000h
0001h
Mfr. code
Device code 04h 100 ns
52h 100 ns
02h
250 µs
Verify-0
Verify-1
Converge
Program
Erase
04h
08h
10h
40h
80h
A
x
A
DOUT
DOUT
Status
Status
Status
25 µs
250 µs
250 µs
250 µs
250 µs
1000 µs
IN
IN
A
x
A
25 µs
IN
IN
A
00h
A
100 ns
100 ns
100 ns
IN
IN
A
D
A
IN
IN
IN
A
FFh
A
IN
IN
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Individual write commands are used together in eight program and erase algorithms to guarantee the AS29F010 operating margins for the
life of the part. Refer to the AS29F010 Programming Specification for details on the algorithms for program and erase operation .
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Parameter
Symbol
VCC
Min
4.5
0
Typ
5.0
0
Max
Unit
5.5
V
Supply voltage
Input voltage
V
0
V
SS
V
2.0
–0.5
-
VCC + 1.0
0.8
V
IH
V
-
V
IL
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Parameter
Symbol
Min
–1.0
–1.0
–1.0
+4.5
–55
–65
-
Max
Unit
V
Input voltage (Input or DQ pin)
Input voltage (A9 pin)
Output voltage
V
VCC + 1.0
+13.0
VCC + 1.0
+5.5
IN
V
V
IN
V
V
OUT
Power supply voltage
VCC
TOPR
TSTG
IOUT
IIN
V
Operating temperature
Storage temperature (plastic)
Short circuit output current
Latch-up current
+125
°C
°C
mA
mA
+125
100
-
±100
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions outside those indicated in the operational sections of this specification is notimplied. Exposure to absolute max-
imum rating conditions for extended periods may affect reliability.
7
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ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
