AS29F010
AS29F011
AC PARAMETERS–READ CYCLE
(V = 5.0±0.5V, GND = 0V, T = 0°C to +70°C)
CC
a
-70
-90
-120
-150
JEDEC Std
Symbol Symbol Parameter
Min Max Min Max Min Max Min Max
Unit
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Read cycle time
70
-
-
90
-
-
120
-
150
-
ns
ns
ns
ns
ns
ns
ns
AVAV
AVQV
ELQV
GLQV
EHQZ
GHQZ
AXQX
RC
ACC
CE
Address to output delay
Chip enable to output
70
70
30
20
20
0
90
90
35
20
20
0
-
-
-
-
-
-
120
120
50
30
30
0
-
-
-
-
-
-
150
150
50
30
30
0
-
-
Output enable to output
Chip enable to output high-Z
Output enable to output high-Z
-
-
OE
DF
-
-
-
-
DF
Output hold time from addresses, first
occurrence of CE or OE
-
-
OH
†
t
RP Power up recovery time
-
1
-
1
-
1
-
1
µs
PWH
†
Applies to version AS29F011 only.
AC PARAMETERS–WRITE CYCLE
(V = 5.0±0.5V, GND = 0V, T = 0°C to +70°C)
CC
a
-70
-90
-120
-150
JEDEC Std
Symbol Symbol Parameter
Min Max Min Max Min Max Min Max
Unit
t
t
t
t
t
t
t
t
t
t
t
t
Write cycle time
-
-
-
-
-
-
-
-
70
0
-
-
-
-
-
-
-
-
90
0
-
-
-
-
-
-
-
-
120
0
-
-
-
-
-
-
-
-
150
0
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
AVWL
WLAX
DVWH
WHDX
WC
Address setup time
Address hold time
Data setup time
AS
45
30
0
45
45
0
50
50
0
50
50
0
AH
DS
Data hold time
DH
OES
OEH
Output enable setup time
Output enable hold time: Read
0
0
0
0
0
0
0
0
Output enable hold time:
Toggle and data polling
10
10
10
10
t
t
t
t
t
t
t
t
t
t
t
t
Read recover time before write
CE setup time
-
-
-
-
-
-
-
-
0
0
-
-
-
-
-
-
-
-
0
0
-
-
-
-
-
-
-
-
0
0
-
-
-
-
-
-
-
-
0
0
ns
ns
ns
ns
ns
µs
µs
µs
GHWL
ELWL
WHEH
WLWH
WHWL
GHWL
CS
CE hold time
0
0
0
0
CH
Write pulse width
35
20
250
1000
2
45
20
250
1000
2
80
20
250
1000
2
80
20
250
1000
2
WP
Write pulse width high
Programming pulse time
Erase pulse time
WPH
t
WHWH1 WHWH1
t
WHWH2 WHWH2
t
V
setup time
CC
VCS
7
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
