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Description
Programming the AS29F002 is a four bus cycle operation performed on a byte-by-byte basis. Two
unlock write cycles precede the Program Setup command and program data write cycles. Upon
execution of the program command, no additional CPU controls or timings are necessary.
Addresses are latched on the falling edge of CE or WE (whichever is last); data is latched on the
rising edge of CE or WE, (whichever is first). The AS29F002’s automated on-chip program
algorithm provides adequate internally-generated programming pulses and verifies the
programmed cell margin.
Check programming status by sampling data on DATA polling (DQ7) or the toggle bit (DQ6). The
AS29F002 returns the equivalent data that was written to it (as opposed to complemented data),
to complete the programming operation.
The AS29F002 ignores commands written during programming. A hardware reset occurring
during programming may corrupt the data at the programmed location.
AS29F002 allows programming in any sequence and across any sector boundary. Changing data
from 0 to 1 requires an erase operation. Attempting to program data 0 to 1 results in DQ5 = 1
(exceeded programming time limits); reading this data after a Read/reset operation returns a 0.
When programming time limit is exceeded,
DQ5 reads high, and DQ6 continues to toggle. In this state, a reset command returns the device to
read mode.
Chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional
unlock write cycles; and finally the Chip Erase command.
Byte Programming
Chip Erase
Chip erase does not require logical 0s written prior to erasure. When the automated on-chip erase
algorithm is invoked with the Chip Erase command sequence, AS29F002 automatically programs
and verifies the entire memory array for an all-zero pattern prior to erase. The AS29F002 returns
to read mode upon completion of chip erase unless DQ5 is set high as a result of exceeding time
limit.
Sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional
unlock write cycles, and finally the Sector Erase command. Determine the sector to be erased by
addressing any location in the sector. This address is latched on the falling edge of WE; the
command, 30H is latched on the rising edge of WE. The sector erase operation begins after a
80 µs time-out.
To erase multiple sectors, write the sector erase command to each of the addresses of sectors to
erase after following the six bus cycle operation above. Timing between writes of additional
sectors must be <80 µs, or the AS29F002 ignores the command and erasure begins. During the
time-out period any falling edge of WE resets the time-out. Any command, other than Sector
Erase or Erase Suspend, during time-out resets the AS29F002 to read mode, and the device
ignores the sector erase command string. Erase such ignored sectors by restarting the Sector Erase
command on the ignored sectors.
The entire array need not be written with 0s prior to erasure. AS29F002 writes 0s to the entire
sector prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected
sectors unaffected. AS29F002 requires no CPU control or timing signals during sector erase
operations.
Automatic sector erase begins after erase time-out from the last rising edge of WE from the sector
erase command stream and ends when the DATA polling (DQ7) is logical 1. DATA polling address
must be performed on addresses that fall within the sectors being erased. AS29F002 returns to
read mode after sector erase unless DQ5 is set high by exceeding the time limit.
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Sector Erase
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ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
