AS29CF160T-55TIN
AS29CF160B-55TIN
Table 7. Device Geometry Definition
Addresses
(Word Mode)
27h
Addresses
(Byte Mode)
4Eh
Data
Description
0015h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
001Eh
0000h
0000h
0001h
Device Size = 2N byte
28h
50h
Flash Device Interface Description
29h
52h
2Ah
54h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Bh
56h
2Ch
58h
Number of Erase Block Regions within device
2Dh
5Ah
2Eh
5Ch
Erase Block Region 1 Information
(refer to the CFI specification)
2Fh
5Eh
30h
60h
31h
62h
32h
64h
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
33h
66h
34h
68h
35h
6Ah
36h
6Ch
37h
6Eh
38h
70h
39h
72h
3Ah
74h
3BH
3Ch
76h
78h
Confidential
- 13 of 41 -
Rev.1.0 July 2019
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
