18–40 GHz GaAs MMIC
Voltage Variable Attenuator
AV850M2-00
Features
s
Dual Voltage Control
s
35 dB Attenuation Range
s
Triple Gate 0.25
µm
MESFET Design
s
+10 dBm P
1 dB
All Attenuation States
s
100% On-Wafer RF and DC Testing
s
100% Visual Inspection to MIL-STD-883
MT 2010
0.314
1.050
0.911
Chip Outline
0.982
Description
Alpha’s AV850M2-00 MMIC voltage variable attenuator
is a standard TEE configuration incorporating triple-gate
0.25
µm
power MESFETs. The attenuator has a typical
insertion loss of 3 dB over the 18–40 GHz band. The
attenuation range is 35 dB while typical I/P and O/P return
loss is better than 6 dB. The chip uses Alpha’s proven 0.25
µm
MESFET technology and is based upon MBE layers
and electron beam lithography for the highest uniformity
and repeatability. The MMICs employ surface passivation
to ensure a rugged, reliable part with through-substrate
via holes and gold-based backside metallization to
facilitate a conductive epoxy die attach process. This chip
incorporates triple-gate FETs which results in less
attenuation variation over temperature as well as better
power handling performance at all attenuation states. All
chips are screened for insertion loss, full attenuation and
I/P and O/P match over the 18–40 GHz band for
guaranteed performance.
0.097
0.000
0.000
0.750
1.500
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Control Voltage (V
C
)
Power In (P
IN
)
Junction Temperature (T
J
)
Value
-55°C to +90°C
-65°C to +150°C
-7 V
DC
30 dBm
175°C
Electrical Specifications at 25°C
Parameter
Maximum Attenuation
Minimum Attenuation
Input/Output Return Loss
Maximum Attenuation
Minimum Attenuation
Input/Output Return Loss
Input Power at 1 dB Compression
(For All Attenuation Levels)
1
Thermal Resistance
1. Not measured on a 100% basis.
Condition
V
C
= -1 V, V
C2
= -0.25 V
F = 18–35 GHz
V
C
= -1 V, V
C2
= -3.25 V
F = 18–35 GHz
F = 18–35 GHz
V
C
= 0 V, V
C2
= -0.8 V
F = 35–40 GHz
V
C
= 0 V, V
C2
= -3.25 V
F = 35–40 GHz
F = 35–40 GHz
Symbol
ISO
I
L
RL
ISO
I
L
RL
P
1 dB
Θ
JC
Min.
20
Typ.
2
30
2
-10
Max.
Unit
dB
3
-6
dB
dB
dB
20
35
3
-10
10
101
4
-5
dB
dB
dBm
°C/W
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 9/00A
1
ALPHA [ ALPHA INDUSTRIES ]
