HIP3™ Variable Attenuator 1.70–2.00 GHz
AV102-12
Pin Out
680
Ω
Connection Diagram
RF OUT
220 pF
220 pF
100 nH
CONTROL
CURRENT
GND
RF IN
CONTROL
CURRENT
CONTROL
CURRENT
100 nH
CONTROL
CURRENT
GND
1
2
3
4
0.1630
0.0190 TYP.
8
7
6
GND
GND
RF In
RF Out
5
SOIC-8
PIN 8
0.050 (1.27 mm) BSC
Absolute Maximum Ratings
Characteristic
RF Input Power
Control Current
Operating Temperature
Storage Temperature
Maximum Reverse Diode Voltage
Electrostatic Discharge
Value
.5 W CW, 4 W @ 12.5%
Duty Cycle
50 mA Each Diode
-40 to +85°C
-40 to +85°C
-10 V
+125 V
0.197 (5.00 mm)
0.189 (4.80 mm)
0.010 (0.25 mm)
0.004 (0.10 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
0.010 (0.25 mm)
0.007 (0.17 mm)
0.068
(1.73 mm) MAX.
PIN 1
INDICATOR
0.244 (6.20 mm)
0.228 (5.80 mm)
PIN 1
0.020 (0.51 mm) MAX.
0.049
(1.24 mm)
0.016
(0.41 mm)
0.016 MAX.
(0.41 mm) x
45˚ CHAMFER
Note: Operating this device above any of these parameters may cause
irreversible damage.
8˚
MAX.
Recommended Board Layout
0.0200 DIA.
VIA 4 PLACES
0.0555 TYP.
Material is 10 mil FR4.
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/01A
3
ALPHA [ ALPHA INDUSTRIES ]
