GaAs 35 dB IC Voltage Variable Single
Control Attenuator 0.4–2.5 GHz
AT002S3-11
Features
s
Single Positive Control Voltage
s
35 dB Attenuation Range
s
8 Lead Hermetic Surface Mount Package
s
Capable of Meeting MIL-STD
Requirements
5
-11
ORIENTATION
MARK
0.180 (4.57 mm)
SQ. MAX.
0.150
(3.81 mm)
0.017 (0.43 mm)
0.013 (0.33 mm)
0.050
(1.27 mm)
TYP.
0.400 (10.16 mm)
0.380 (9.65 mm)
Description
The AT002S3-11 is a GaAs IC FET absorptive bridged “T”
attenuator. This attenuator operates from 0.4–2.5 GHz and
provides up to 35 dB of attenuation. The key feature of this
attenuator is the requirement of only one “positive” control
voltage. Blocking capacitors are required on the RF ports.
0.070 (1.78 mm)
0.040 (1.02 mm)
0.075
(1.91 mm)
MAX.
0.006 (0.15 mm)
0.004 (0.10 mm)
0.250 (6.35 mm)
0.200 (5.08 mm)
Electrical Specifications at 25°C
Parameter
1
Insertion Loss (V
1
=
5 V)
2
Frequency
0.4–1.0 GHz
1.0–2.0 GHz
1.0–2.5 GHz
0.4–1.0 GHz
1.0–2.5 GHz
0.4–2.5 GHz
30
33
Min.
Typ.
1.5
1.7
2.2
35
38
2.2:1
2.5:1
Max.
1.7
2.0
2.5
Unit
dB
dB
dB
dB
dB
Attenuation Range (V
1
= 0)
VSWR (I/O)
3
Operating Characteristics at 25°C
Parameter
Switching Characteristics
Condition
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Video Feedthru
4
0–10 dB
11–20 dB
21–30 dB
31–Max.
For All Attenuation Levels
V
Low
= 0 to -0.2 V @ 25
µA
Max.
V
High
= 5 V @ 100
µA
Typ.
5 V @ 100
µA
Max.
0.4–2.5 GHz
Frequency
Min.
Typ.
0.5
1.0
20
±1.0
±1.5
±3.0
±4.0
-3
Max.
Unit
µs
µs
mV
dB
dB
dB
dB
dBm
Attenuation Flatness
Input Power for 1 dB Compression
Control Voltages
Supply Voltages (V
S
)
0.9 GHz
1. All measurements made in a 50
Ω
system, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3. For all attenuation levels.
4. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
5. See Quality/Reliability section.
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 3/99A
1
ALPHA [ ALPHA INDUSTRIES ]
