July 2001
AO8800
Common-Drain Dual N-Channel Enhancement Mode
Field Effect Transistor
General Description
The AO8800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. This device is
suitable for use as a uni-directional or bi-directional
load switch, facilitated by its common-drain
configuration.
Features
V
DS
(V) = 30V
I
D
= 6.4A
R
DS(ON)
< 24mΩ (V
GS
= 10V)
R
DS(ON)
< 30mΩ (V
GS
= 4.5V)
R
DS(ON)
< 40mΩ (V
GS
= 2.5V)
R
DS(ON)
< 70mΩ (V
GS
= 1.8V)
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
S1
D1
D2
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±12
Continuous Drain
T
A
=25°C
6.4
A
Current
T
A
=70°C
5.4
I
D
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
A
Units
V
V
A
I
DM
P
D
T
J
, T
STG
30
1.5
1.08
-55 to 150
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
ALPHA [ ALPHA INDUSTRIES ]
