March 2002
AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion.
Features
V
DS
(V) = 30V
I
D
= 11.5A
R
DS(ON)
< 14mΩ (V
GS
= 10V)
R
DS(ON)
< 16.5mΩ (V
GS
= 4.5V)
R
DS(ON)
< 26mΩ (V
GS
= 2.5V)
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
B
B,E
B,E
Maximum
30
±12
11.5
9.6
80
25
78
3
2.1
-55 to 150
Units
V
V
A
A
mJ
W
°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AV
L=0.1mH
E
AV
P
D
T
J
, T
STG
T
A
=25°C
Repetitive Avalanche Energy
Power Dissipation
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
23
48
12
Max
40
65
16
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.