General Purpose PHEMT Chip
AFP02N8-000
Features
s
Low Noise Figure, 1.25 dB @ 4 GHz
s
High Associated Gain, 15.0 dB @ 4 GHz
s
High MAG, > 18 dB @ 4 GHz
s
0.7
µm
Ti/Pd/Au Gates
s
Passivated Surface
350
125
S
G
G
S
50
50
D
D
78
50
Description
The AFP02N8-000 general purpose PHEMT chip has
excellent gain and noise performance through X band,
making it suitable for a wide range of commercial and military
applications.The device employs 0.7
µm
Ti/Pd/Au gates and
surface passivation to ensure a rugged, reliable part.
50
20
400
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
Value
6V
-3 V
I
DSS
10
µA
300 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-off Voltage (V
P
)
Gate to Source
Breakdown Voltage (V
bgs
)
Noise Figure (NF)
Associated Gain (G
A
)
Noise Figure (NF)
Associated Gain (G
A
)
Test Conditions
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 2 V, I
DS
= 15 mA
V
DS
= 2 V, I
DS
= 0.3 mA
I
GS
= -200
µA
Min.
25.0
40.0
-0.2
-4.0
Typ.
45.0
55.0
-0.6
-6.0
1.25
14.0
8.5
15.0
2.6
9.4
3.0
1.75
-2.0
Max.
90.0
Unit
mA
mS
V
V
dB
dB
dB
dB
V
DS
= 2 V, I
DS
= 15 mA, F = 4 GHz
V
DS
= 2 V, I
DS
= 15 mA, F = 12 GHz
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
ALPHA [ ALPHA INDUSTRIES ]
