Ka Band Power GaAs MESFET Chips
AFM06P3-212, AFM06P3-213
Features
s
22 dBm Output Power @ 18 GHz
s
High Associated Gain, 9 dB @ 18 GHz
s
High Power Added Efficiency, 23%
s
Broadband Operation, DC–18 GHz
s
0.25
µm
Ti/Pd/Au Gates
s
Passivated Surface
Source
212
Gate
Drain
Source
Gate
Source
Drain
213
Source
Description
The AFM06P3-212, 213 are high performance power
GaAs MESFET chips in an industry standard ceramic
micro-x package, having a gate length of 0.25
µm
and a
total gate periphery of 600
µm.
These devices have
excellent gain and power performance through 26 GHz,
making them suitable for a wide range of commercial and
military applications in oscillator and amplifier circuits. They
employ Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (V
DS
)
Gate to Source Voltage (V
GS
)
Drain Current (I
DS
)
Gate Current (I
GS
)
Total Power Dissipation (P
T
)
Storage Temperature (T
ST
)
Channel Temperature (T
CH
)
Value
6V
-4 V
I
DSS
1 mA
1.1 W
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (I
DSS
)
Transconductance (gm)
Pinch-Off Voltage (V
P
)
Gate to Drain Breakdown
Voltage (V
bgd
)
Output Power at 1 dB
Compression (P
1 dB
)
Gain at 1 dB Compression (G
1 dB
)
Power Added Efficiency (ηadd)
Test Conditions
V
DS
= 2 V, V
GS
= 0 V
V
DS
= 5 V, I
DS
= 1.5 mA
I
GD
= 600
µA
Min.
130.0
90.0
1.0
8.0
Typ.
200.0
120.0
3.0
12.0
22.0
V
DS
= 5 V, I
DS
= 70 mA, F = 18 GHz
9.0
23.0
5.0
Max.
270.0
Unit
mA
mS
V
V
dBm
dB
%
Alpha Industries, Inc.
[781] 935-5150
•
Fax
[617] 824-4579
•
Email
sales@alphaind.com
•
www.alphaind.com
Specifications subject to change without notice. 6/99A
1
ALPHA [ ALPHA INDUSTRIES ]
