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AA038N1-00 参数 Datasheet PDF下载

AA038N1-00图片预览
型号: AA038N1-00
PDF下载: 下载PDF文件 查看货源
内容描述: 28-40 GHz的砷化镓MMIC低噪声放大器 [28-40 GHz GaAs MMIC Low Noise Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 2 页 / 137 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
 浏览型号AA038N1-00的Datasheet PDF文件第2页  
28–40 GHz GaAs MMIC
Low Noise Amplifier
AA038N1-00, AA038N2-00
Features
I
Single Bias Supply Operation (4.5 V)
I
3.8 dB Typical Noise Figure at 38 GHz
I
17 dB Typical Small Signal Gain
I
0.25
µm
Ti/Pd/Au Gates
I
100% On-Wafer RF, DC and Noise Figure
Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
0.588
0.087
0.124
0.000
0.000
0.246
1.264
1.813
2.146
2.600
2.710
Chip Outline
1.560
1.961
2.183
2.445
1.355
1.274
1.267
2.599
Description
Alpha’s four-stage reactively-matched 28–40 GHz GaAs
MMIC low noise amplifier has typical small signal gain of
17 dB with a typical noise figure of 3.8 dB at 38 GHz. The
chip uses Alpha’s proven 0.25
µm
low noise PHEMT
technology, and is based upon MBE layers and electron
beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process.
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Absolute Maximum Ratings
Characteristic
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
Value
-55°C to +90°C
-65°C to +150°C
6 V
DC
10 dBm
175°C
Electrical Specifications at 25°C (V
DS
= 4.5 V)
AA038N1-00
Parameter
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain
Thermal Resistance
2
Compression
1
F = 28–40 GHz
F = 38 GHz
F = 28–40 GHz
F = 28–40 GHz
F = 38 GHz
Condition
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
15
Min.
Typ.
3
35
17
3.8
-10
-8
6
101
4.2
-6
-6
Max.
50
Unit
mA
dB
dB
dB
dB
dBm
°C/W
AA038N2-00
Parameter
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
1
Thermal Resistance
2
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
Condition
F = 37–39.5 GHz
F = 38 GHz
F = 37–39.5 GHz
F = 37–39.5 GHz
F = 38 GHz
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
Min.
17
Typ.
3
35
19
3.8
-14
-11
6
101
Max.
50
4.2
-6
-8
Unit
mA
dB
dB
dB
dB
dBm
°C/W
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1