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AA035N1-00 参数 Datasheet PDF下载

AA035N1-00图片预览
型号: AA035N1-00
PDF下载: 下载PDF文件 查看货源
内容描述: 28-36 GHz的砷化镓MMIC低噪声放大器 [28-36 GHz GaAs MMIC Low Noise Amplifier]
分类和应用: 放大器射频微波
文件页数/大小: 3 页 / 176 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
 浏览型号AA035N1-00的Datasheet PDF文件第2页浏览型号AA035N1-00的Datasheet PDF文件第3页  
28–36 GHz GaAs MMIC
Low Noise Amplifier
AA035N1-00, AA035N2-00
Features
s
Dual Bias Supply Operation (4.5 V)
s
2.8 dB Typical Noise Figure at 32 GHz
s
12 dB Typical Small Signal Gain
s
0.25
µm
Ti/Pd/Au Gates
s
100% On-Wafer RF, DC and Noise Figure
Testing
s
100% Visual Inspection to MIL-STD-883
MT 2010
1.598
Chip Outline
2.370
2.255
0.116
0.000
0.000
0.269
0.627
0.985
1.343
1.701
2.059
2.417
2.690
Description
Alpha’s two-stage balanced 28–36 GHz MMIC low noise
amplifier has typical small signal gain of 12 dB with a
typical noise figure of 2.6 dB at 32 GHz. The chip uses
Alpha’s proven 0.25
µm
low noise PHEMT technology, and
is based upon MBE layers and electron beam lithography
for the highest uniformity and repeatability. The FETs
employ surface passivation to ensure a rugged, reliable
part with through-substrate via holes and gold-based
backside metallization to facilitate a conductive epoxy die
attach process.
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
AA035N1-00 Electrical Specifications at 25°C (V
DS
= 4.5 V, I
D
= 70 mA)
Parameter
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
1
Thermal
Resistance
2
F = 28–36 GHz
F = 32 GHz
F = 28–36 GHz
F = 28–36 GHz
F = 35 GHz
Condition
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
10
Min.
Typ.
3
70
12
2.8
-17
-20
10
50
3.2
-12
-12
Max.
90
Unit
mA
dB
dB
dB
dB
dBm
°C/W
AA035N2-00 Electrical Specifications at 25°C (V
DS
= 4.5 V, I
D
= 70 mA)
Parameter
Drain Current
Small Signal Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
1
Thermal
Resistance
2
F = 28–36 GHz
F = 32 GHz
F = 28–36 GHz
F = 28–36 GHz
F = 35 GHz
Condition
Symbol
I
DS
G
NF
RL
I
RL
O
P
1 dB
Θ
JC
9
Min.
Typ.
3
70
12
3.0
-17
-20
10
50
3.8
-12
-12
Max.
90
Unit
mA
dB
dB
dB
dB
dBm
°C/W
1. Not measured on a 100% basis.
2. Calculated value based on measurement of discrete FET.
3. Typical represents the median parameter value across the specified
frequency range for the median chip.
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 7/00A
1