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AA028P1-00 参数 Datasheet PDF下载

AA028P1-00图片预览
型号: AA028P1-00
PDF下载: 下载PDF文件 查看货源
内容描述: 27-29 GHz的砷化镓MMIC功率放大器 [27-29 GHz GaAs MMIC Power Amplifier]
分类和应用: 放大器射频微波功率放大器
文件页数/大小: 2 页 / 141 K
品牌: ALPHA [ ALPHA INDUSTRIES ]
 浏览型号AA028P1-00的Datasheet PDF文件第2页  
27–29 GHz GaAs MMIC
Power Amplifier
AA028P1-00
Features
I
Single Bias Supply Operation (6 V)
I
22 dBm Typical P
1 dB
Output Power
at 28 GHz
I
13.5 dB Typical Small Signal Gain
I
0.25
µm
Ti/Pd/Au Gates
I
100% On-Wafer RF and DC Testing
I
100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
1.700
1.613
1.371
0.086
0.329
0.000
0.000
0.519
2.784
3.400
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Description
Alpha’s two-stage balanced Ka band GaAs MMIC
power amplifier has a typical P
1 dB
of 22 dBm with
12.5 dB associated gain and 10% power added efficiency
at 28 GHz. The chip uses Alpha’s proven 0.25
µm
MESFET technology, and is based upon MBE layers and
electron beam lithography for the highest uniformity and
repeatability. The FETs employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
a conductive epoxy die attach process. All chips are
screened for S-parameters and power characteristics prior
to shipment for guaranteed performance. A broad range
of applications exist in both the commercial and high
reliability areas where high power and gain are required.
Absolute Maximum Ratings
Characteristic
Operating Temperature (T
C
)
Storage Temperature (T
ST
)
Bias Voltage (V
D
)
Power In (P
IN
)
Junction Temperature (T
J
)
Value
-55°C to +90°C
-65°C to +150°C
7 V
DC
22 dBm
175°C
Electrical Specifications at 25°C (V
DS
= 6 V)
Parameter
Drain Current (at Saturation)
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at 1 dB Gain Compression
Saturated Output Power
Gain at Saturation
Thermal Resistance
1
1. Calculated value based on measurement of discrete FET.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
Condition
F = 27–29 GHz
F = 27–29 GHz
F = 27–29 GHz
F = 28 GHz
F = 28 GHz
F = 28 GHz
Symbol
I
DS
G
RL
I
RL
O
P
1 dB
P
SAT
G
SAT
Θ
JC
Min.
11
Typ.
2
300
13.5
-13
-16
Max.
400
-10
-10
Unit
mA
dB
dB
dB
dBm
dBm
dB
°C/W
21
22
22
23
11
51
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 12/99A
1