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ALD210808APCL 参数 Datasheet PDF下载

ALD210808APCL图片预览
型号: ALD210808APCL
PDF下载: 下载PDF文件 查看货源
内容描述: [PRECISION N-CHANNEL EPAD MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR]
分类和应用:
文件页数/大小: 12 页 / 113 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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ABSOLUTE MAXIMUM RATINGS  
Drain-Source voltage, V  
10.6V  
10.6V  
80mA  
DS  
Gate-Source voltage, V  
Operating Current  
Power dissipation  
GS  
500mW  
Operating temperature range SCL, PCL  
Storage temperature range  
Lead temperature, 10 seconds  
0°C to +70°C  
-65°C to +150°C  
+260°C  
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.  
OPERATING ELECTRICAL CHARACTERISTICS  
+
-
V = +5V V = GND T = 25°C unless otherwise specified  
A
ALD210808A  
ALD210808  
Parameter  
Symbol  
GS(th)  
OS  
Min  
0.78  
Typ  
Max  
Min  
Typ  
Max  
Unit  
Test Conditions  
Gate Threshold Voltage  
V
V
0.80  
0.82  
0.78  
0.80  
0.82  
V
I
= 10µA, V  
= 0.1V  
DS  
V
DS  
Offset Voltage  
1
2
2
10  
mV  
- V  
- V  
GS(th)M1  
GS(th)M3  
GS(th)M2  
GS(th)M4  
or V  
Offset Voltage Tempco  
TC  
5
5
µV/°C  
mV/°C  
V
= V  
DS1 DS2  
VOS  
Gate Threshold Voltage Tempco TC  
-1.6  
0.0  
+1.6  
-1.6  
0.0  
+1.6  
I
D
I
D
I
D
= 10µA, V = 0.1V  
DS  
VGS(th)  
= 380µA, V  
= 700µA, V  
= 0.1V  
= 0.1V  
DS  
DS  
70  
50  
70  
50  
mA  
V
V
= +4.8V, V  
= +5V  
GS  
GS  
DS  
DS  
Drain Source On Current  
Forward Transconductance  
I
DS(ON)  
µA  
= +0.9V, V  
= +0.1V  
G
24  
24  
mmho  
V
V
= +4.8V  
= +5.0V  
FS  
GS  
DS  
Transconductance Mismatch  
Output Conductance  
G  
1.8  
1.6  
1.8  
1.6  
%
FS  
G
mmho  
V
V
= +4.8V  
= +5.0V  
OS  
GS  
DS  
Drain Source On Resistance  
Drain Source On Resistance  
R
R
25  
25  
V
V
= +5.8V  
= +0.1V  
DS(ON)  
DS(ON)  
GS  
DS  
10  
2.0  
10  
2.0  
KΩ  
V
V
= +0.8V, V  
= +0.9V, V  
= +0.1V  
= +0.1V  
GS  
GS  
DS  
DS  
Drain Source On Resistance  
Tolerance  
R  
1.8  
0.6  
1.8  
0.6  
%
V
V
= +5.8V  
= +0.1V  
DS(ON)  
GS  
DS  
Drain Source On Resistance  
Mismatch  
R  
BV  
I
%
V
DS(ON)  
-
Drain Source Breakdown  
Voltage  
10  
10  
V = V  
= -0.2V  
GS  
= 10µA  
DSX  
I
DS  
Drain Source Leakage Current1  
10  
5
400  
4
10  
5
400  
4
pA  
nA  
V
= -0.2V, V  
= +5V  
DS(OFF)  
GS  
DS  
-
V = -5V  
T
A
= 125°C  
Gate Leakage Current1  
I
200  
1
200  
1
pA  
nA  
V
= +5V, V  
= 125°C  
= 0V  
DS  
GSS  
GS  
T
A
Input Capacitance  
C
C
15  
1
15  
1
pF  
pF  
ISS  
Transfer Reverse Capacitance  
RSS  
+
+
Turn-on Delay Time  
Turn-off Delay Time  
t
t
10  
10  
10  
10  
ns  
ns  
V
V
= 5V, R = 5KΩ  
L
on  
= 5V, R = 5KΩ  
off  
L
Crosstalk  
60  
60  
dB  
f = 100KHz  
1
Notes:  
Consists of junction leakage currents  
ALD210808A/ALD210808  
Advanced Linear Devices  
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