ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
Gate-Source voltage,
V
GS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V TA = 25
°
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD114808A / ALD114908A
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
VOS
∆V
OS
∆V
GS(th)
Min
-0.42
Typ
-0.40
Max
-0.38
ALD110848 / ALD114908
Min
-0.44
Typ
-0.40
Max
-0.36
Unit
V
Test Condition
IDS =1µA
VDS = 0.1V
IDS =1µA
VDS1 = VDS2
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
VGS = +9.1V
VGS = +3.6V
VDS = +5V
VGS =+3.6 V
VDS = +8.6V
Offset Voltage
VGS1-VGS2
VGS1-VGS2 Tempco
GateThreshold Tempco
2
5
7
20
mV
5
-1.7
0.0
+1.6
12.0
3.0
5
-1.7
0.0
+1.6
12.0
3.0
µV/ °C
mV/
°C
On Drain Current
IDS (ON)
mA
Forward Transconductance
GFS
∆G
FS
GOS
RDS (ON)
1.4
1.4
mmho
Transconductance Mismatch
Output Conductance
1.8
68
1.8
68
%
µmho
VGS =+3.6V
VDS = +8.6V
VDS = 0.1V
VGS = +3.6V
VDS = 0.1V
VGS = +0.0V
Drain Source On Resistance
500
500
Ω
Drain Source On Resistance
RDS (ON)
5.4
5.4
KΩ
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
∆R
DS (ON)
10
10
%
∆R
DS (ON)
BVDSX
IDS (OFF)
IGSS
CISS
CRSS
ton
toff
10
0.5
10
0.5
%
V
IDS = 1.0µA
VGS = -1.4V
VGS = -1.4V, VDS =+5V
TA = 125°C
VDS = 0V VGS = +10V
TA =125°C
10
100
4
30
1
10
100
4
30
1
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current
1
3
3
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Notes:
1
2.5
0.1
10
10
60
2.5
0.1
10
10
60
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Consists of junction leakage currents
ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
