ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
Gate-Source voltage,
V
GS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25
°
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110804 / ALD110904
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TC
∆
VOS
TC∆VGS(th)
Min
0.38
Typ
0.40
2
5
-1.7
0.0
+1.6
12.0
3.0
Max
0.42
10
Unit
V
mV
µV/ °C
mV/
°C
VDS1 = VDS2
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
VGS = + 9.7V
VGS = + 4.2V
VDS = +5V
VGS = + 4.2V
VDS = + 9.2V
Test Conditions
IDS =1µA
VDS = 0.1V
On Drain Current
IDS (ON)
mA
Forward Transconductance
GFS
1.4
mmho
Transconductance Mismatch
Output Conductance
∆G
FS
GOS
RDS (ON)
1.8
68
%
µmho
VGS =+4.2V
VDS = +9.2V
VDS = 0.1V
VGS = +4.2V
Drain Source On Resistance
500
Ω
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
∆R
DS (ON)
BVDSX
IDS (OFF)
IGSS
CISS
CRSS
ton
toff
0.5
%
10
V
IDS = 1.0µA
VGS = -0.8V
VGS = -0.8V
VDS =10V, TA = 125°C
VDS = 0V VGS = 10V
TA =125°C
10
100
4
30
1
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current
1
3
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Notes:
1
2.5
0.1
10
10
60
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Consists of junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
