ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
Gate-Source voltage,
V
GS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25
°
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110800A / ALD110900A
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
VOS
TCVOS
TCVGS(th)
Min
-0.01
Typ
0.00
1
Max
0.01
2
ALD110800/ ALD110900
Min
-0.02
Typ
0.00
2
Max
0.02
10
Unit
V
mV
Test Conditions
IDS =1µA, VDS = 0.1V
5
-1.7
0.0
+1.6
12.0
3.0
1.4
5
-1.7
0.0
+1.6
12.0
3.0
1.4
µV/°C
mV/°C
VDS1 = VDS2
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
VGS = +9.5V, VDS = +5V
VGS = +4.0V, VDS = +5V
VGS = +4.0V
VDS = +9.0V
On Drain Current
IDS (ON)
GFS
mA
Forward Transconductance
mmho
Transconductance Mismatch
Output Conductance
∆G
FS
GOS
RDS (ON)
1.8
68
1.8
68
%
µmho
VGS = +4.0V
VDS = +9.0V
VDS = +0.1V
VGS = +4.0V
VDS = +0.1V
VGS = +0.0V
VDS = +0.1V
VGS = +4.0V
Drain Source On Resistance
500
500
Ω
Drain Source On Resistance
RDS (ON)
104
104
KΩ
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
∆R
DS (ON)
5
5
%
∆R
DS (ON)
BVDSX
IDS (OFF)
10
0.5
0.5
%
10
V
IDS = 1.0µA
V-= VGS = -1.0V
VGS = -1.0V, VDS =+5V
V- = -5V
TA = 125°C
VDS = 0V VGS = +10V
TA =125°C
10
400
4
10
400
4
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current
1
IGSS
CISS
CRSS
ton
toff
5
30
1
5
30
1
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Notes:
1
2.5
0.1
10
10
60
2.5
0.1
10
10
60
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Consists of junction leakage currents
ALD110800/ALD110800A/ALD110900/ALD110900A
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
