ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
Gate-Source voltage,
V
GS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25
°
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110814 / ALD110914
Parameter
Gate Threshold Voltage
Offset Voltage
VGS(th)1-VGS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
Symbol
VGS(th)
Min
1.38
Typ
1.40
Max
1.42
Unit
V
Test Conditions
IDS =1µA
VDS = 0.1V
IDS =1µA
VDS1 = VDS2
ID = 1µA
ID = 20µA, VDS = 0.1V
ID = 40µA
VGS = +10.6V
VGS = + 5.4V
VDS = + 5V
VGS = +5.4V
VDS = +10.4V
VOS
TC
∆
VOS
TC∆VGS(th)
3
5
-1.7
0.0
+1.6
12.0
3.0
10
mV
µV/ °C
mV
°C
On Drain Current
IDS (ON)
mA
Forward Transconductance
GFS
1.4
mmho
Transconductance Mismatch
∆G
FS
GOS
RDS (ON)
1.8
%
VGS = + 5.4V
VDS = +10.4V
VDS = 0.1V
VGS = +4.0V
VDS = 0.1V
VGS = +5.4V
IDS = 1.0µA
VGS = -0.4V
VGS = +0.4V
VDS =10V, TA = 125°C
VDS = 0V VGS = 10V
TA =125°C
Output Conductance
Drain Source On Resistance
68
500
µmho
Ω
Drain Source On Resistance
Mismatch
Drain Source Breakdown Voltage
∆R
DS (ON)
0.5
%
BVDSX
IDS (OFF)
10
V
Drain Source Leakage Current
1
10
100
4
30
1
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current
1
IGSS
CISS
CRSS
ton
toff
3
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
2.5
0.1
10
10
60
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Notes:
1
Consists of junction leakage currents
ALD110814/ALD110914
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
