ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, V
Gate-Source voltage, V
Power dissipation
10.6V
10.6V
500 mW
DS
GS
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND
T
A
= 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110804 / ALD110904
Parameter
Symbol
Min
0.38
Typ
0.40
Max
Unit
Test Conditions
I =1µA
DS
Gate Threshold Voltage
V
V
0.42
V
GS(th)
OS
V
= 0.1V
DS
Offset Voltage
2
10
mV
V
-V
GS(th)1 GS(th)2
Offset VoltageTempco
TC ∆
5
µV/ °C
mV/ °C
V
= V
DS2
VOS
DS1
GateThreshold Voltage Tempco
TC∆
-1.7
0.0
+1.6
I
D
I
D
I
D
= 1µA
VGS(th)
= 20µA, V
= 40µA
= 0.1V
DS
On Drain Current
I
12.0
3.0
mA
V
V
V
= + 9.7V
= + 4.2V
= +5V
DS (ON)
GS
GS
DS
Forward Transconductance
G
1.4
mmho
V
V
= + 4.2V
= + 9.2V
FS
GS
DS
Transconductance Mismatch
Output Conductance
∆G
FS
1.8
68
%
G
µmho
V
V
=+4.2V
= +9.2V
OS
GS
DS
Drain Source On Resistance
R
500
0.5
10
10
3
Ω
%
V
V
V
= 0.1V
= +4.2V
DS (ON)
DS
GS
Drain Source On Resistance
Mismatch
∆R
BV
I
DS (ON)
DSX
Drain Source Breakdown
Voltage
I
V
= 1.0µA
= -0.8V
DS
GS
Drain Source Leakage Current1
100
4
pA
nA
V
V
= -0.8V
=10V, T = 125°C
DS (OFF)
GS
DS
A
Gate Leakage Current1
I
30
1
pA
nA
V
= 0V V
=125°C
= 10V
GS
GSS
DS
T
A
Input Capacitance
C
C
2.5
0.1
10
pF
pF
ns
ns
ISS
Transfer Reverse Capacitance
Turn-on Delay Time
RSS
+
+
t
on
t
off
V
V
= 5V R = 5KΩ
L
Turn-off Delay Time
10
= 5V R = 5KΩ
L
Crosstalk
60
dB
f = 100KHz
1
Notes:
Consists of junction leakage currents
ALD110804/ALD110904
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
