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ALD1105SB 参数 Datasheet PDF下载

ALD1105SB图片预览
型号: ALD1105SB
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道和双P沟道匹配的一对MOSFET [DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET]
分类和应用:
文件页数/大小: 6 页 / 56 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
 浏览型号ALD1105SB的Datasheet PDF文件第1页浏览型号ALD1105SB的Datasheet PDF文件第2页浏览型号ALD1105SB的Datasheet PDF文件第4页浏览型号ALD1105SB的Datasheet PDF文件第5页浏览型号ALD1105SB的Datasheet PDF文件第6页  
P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
500
LOW VOLTAGE OUTPUT
CHARACTERISTICS
DRAIN SOURCE CURRENT
(µA)
V
BS
= 0V
T
A
= 25°C
V
GS
= -12V
-6V
-4V
-2V
DRAIN SOURCE CURRENT
(mA)
-10
-7.5
V
BS
= 0V
T
A
= 25°C
V
GS
= -12V
-10V
-8V
-6V
250
0
-5.0
-250
-2.5
-4V
-2V
0
0
-2
-4
-6
-8
-10
-12
DRAIN SOURCE VOLTAGE (V)
-500
-320
-160
0
160
320
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE
(mmho)
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0
-2
-4
-6
-8
-10
-12
T
A
= +25°C
I
DS
= -1mA
T
A
= +125°C
-20
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT
(µA)
V
BS
= 0V
-15
2V
4V
6V
8V
10V
12V
V
BS
= 0V
f = 1KHz
I
DS
= -5mA
-10
-5
V
GS
= V
DS
T
A
= 25°C
0
0
-0.8
-1.6
-2.4
-3.2
-4.0
DRAIN SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
R
DS (ON)
vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE
(KΩ)
100
V
DS
= 0.4V
V
BS
= 0V
10
T
A
= +125°C
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
OFF DRAIN SOURCE CURRENT
(pA)
1000
V
DS
= -12V
V
GS
= V
BS
= 0V
100
1
T
A
= +25°C
0.1
0
-2
-4
-6
-8
-10
-12
10
1
-50
-25
0
+25
+50
+75
+100 +125
GATE SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
ALD1105
Advanced Linear Devices
3